P–N Junction Diode & Forward–Reverse Bias questions with solutions

Showing 1–10 of 89 questions

• MCQmediumsemiconductorP–N Junction Diode & Forward–Reverse Bias

  For the shown ideal diode network containing 30 Ω, 20 Ω resistors and a 5 V battery, find supply current.

  Options

  • Option A

    3/50 A

  • Option B

    5/50 A

  • Option C

    4/50 A

  • Option D

    2/50 A

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  AIPMT 2000NEET Previous Year

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• MCQeasysemiconductorP–N Junction Diode & Forward–Reverse Bias

  Reverse current below breakdown is small primarily because:

  Options

  • Option A

    No carriers exist

  • Option B

    Majority carriers are blocked, leaving mainly minority-carrier current

  • Option C

    Battery removes all electrons

  • Option D

    Reverse current is exactly zero

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• MCQeasysemiconductorP–N Junction Diode & Forward–Reverse Bias

  For a p-type semiconductor, which statement is correct?

  Options

  • Option A

    Holes are majority carriers and dopants are trivalent atoms

  • Option B

    Holes are majority carriers and dopants are pentavalent atoms

  • Option C

    Electrons are majority carriers and dopants are pentavalent atoms

  • Option D

    Electrons are majority carriers and dopants are trivalent atoms

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  NEET 2019NEET Previous Year

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• MCQeasysemiconductorP–N Junction Diode & Forward–Reverse Bias

  A reverse-biased p-n junction is operated well below breakdown. Which current remains approximately independent of reverse voltage?

  Options

  • Option A

    Majority-carrier diffusion current

  • Option B

    Minority-carrier drift current

  • Option C

    Majority-carrier drift current

  • Option D

    Hole diffusion current only

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• A/RmediumsemiconductorP–N Junction Diode & Forward–Reverse Bias

  Given below are two statements: one is labelled as Assertion A and the other as Reason R.

  Assertion

  Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.

  Reason

  Diffusion current in a p-n junction is from the n-side to the p-side if the junction is forward biased.

  Options

  • Option A

    A is not correct but R is correct

  • Option B

    Both A and R are correct and R is the correct explanation of A

  • Option C

    Both A and R are correct but R is NOT the correct explanation of A

  • Option D

    A is correct but R is not correct

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• MCQmediumsemiconductorP–N Junction Diode & Forward–Reverse Bias

  P-type semiconductor is formed when A. As impurity is mixed in Si B. Al impurity is mixed in Si C. B impurity is mixed in Ge D. P impurity is mixed in Ge

  Options

  • Option A

    A and C

  • Option B

    A and D

  • Option C

    B and C

  • Option D

    B and D

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• MCQeasysemiconductorP–N Junction Diode & Forward–Reverse Bias

  Depletion region width in a p–n junction becomes larger under which bias condition?

  Options

  • Option A

    Reverse bias only

  • Option B

    Forward bias only

  • Option C

    Both forward and reverse bias

  • Option D

    Decrease in both cases

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  NEET 2020NEET Previous Year

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• MatchmediumsemiconductorP–N Junction Diode & Forward–Reverse Bias

  Match List I with List II.

  List 1

  1. A. Intrinsic Semiconductor

  2. B. n-type semiconductor

  3. C. p-type semiconductor

  4. D. Metals

  List 2

  1. I. Fermi-level near conduction band

  2. II. Fermi-level at middle

  3. III. Fermi-level near valence band

  4. IV. Fermi-level inside conduction band

  Options

  • Option A

    A-I, B-II, C-III, D-IV

  • Option B

    A-II, B-I, C-III, D-IV

  • Option C

    A-II, B-III, C-I, D-IV

  • Option D

    A-III, B-I, C-II, D-IV

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  JEE Mains1 February 2023Shift 1Morning Shift

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• MCQeasysemiconductorP–N Junction Diode & Forward–Reverse Bias

  How does the resistance of a p–n junction diode change with increasing temperature?

  Options

  • Option A

    Does not change resistance

  • Option B

    Only forward resistance changes

  • Option C

    Only reverse resistance changes

  • Option D

    Both overall forward and reverse I–V characteristics change

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  NEET 2017NEET Previous Year

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• MCQeasysemiconductorP–N Junction Diode & Forward–Reverse Bias

  At thermal equilibrium, the built-in electric field in a p-n junction is directed:

  Options

  • Option A

    p-side to n-side

  • Option B

    n-side to p-side

  • Option C

    Parallel to junction

  • Option D

    No definite direction

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