Electron concentration in an n-type semiconductor equals hole concentration in a p-type semiconductor. Under the same electric field, compare their drift currents.
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Question

Electron concentration in an n-type semiconductor equals hole concentration in a p-type semiconductor. Under the same electric field, compare their drift currents.

G1 Physics · Accepted Answer

Drift current density of a single dominant carrier is J = n|q|μE. At equal majority-carrier concentrations n and the same E, J is proportional to mobility μ. Typically electron mobility μₙ exceeds hole mobility μₚ in the same semiconductor. Therefore n-type majority-carrier drift current is greater. Final answer: Option C (physically). The supplied book marks A, implicitly ignoring mobility difference; see QA.