Barrier potential of a p–n junction depends on: (I) type of semiconductor, (II) amount of doping, (III) temperature. Which is correct?
Options

Question

Barrier potential of a p–n junction depends on: (I) type of semiconductor, (II) amount of doping, (III) temperature. Which is correct?

G1 Physics · Accepted Answer

Built-in potential V_bi = (kT/q) ln(N_A N_D/nᵢ²). It depends on doping densities, intrinsic carrier density (material), and temperature. Final answer: Option D.